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陆羽

发布日期:2024-01-16 作者: 来源:beat365 点击:

陆羽,讲师。主要研究方向III族氮化物材料及器件,主要包括GaN自支撑单晶衬底的制备;GaN基LED、LD以及功率器件的制备。近年来,作为负责人和合作者多次承担国家自然科学基金课题。专注于利用MOCVD技术在非晶衬底上外延GaN单晶材料,另外异质衬底上利用HVPE技术制备大尺寸、高质量的GaN单晶衬底。共发表SCI论文及专利20余项。

研究领域

GaN基光电子器件

GaN基功率器件

主讲课程

半导体器件物理,半导体器件物理实验。

代表性论文

附一、发表的学术论文目录:

1. Y Lu, Y. Gong, J. Bai, R. Smith and T. Wang, “260 nm AlGaN quantum well structure with high performance grown on novel porous AlN buffer templates on sapphire IWUMD-2018.

2. K. Liu, S.X. Mu, Y. Lu, B.L. Guan, and E.Y.B. Pun, “L-band wavelength-tunable MQW Fabry-Perot laser using a three-segment structure”, IEEE Photonics Technology Letters, Vol. 25, Issue 18, pp.1754-1757, Sep. 2013.

3. LU yu, YANG zhi-jian, PAN yao-bo, etc, “Effect of Al Doping in the IGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition” CHIN.PHYS.LETT, vol.23(1) , pp 256, 2006.

4. Luyu, zhijian Yang, xu ke, yaobo pan, etc. “High-resolution X-ray study of the AlGaN/GaN superlattices grown by Metalorganic Chemical vapor Depostion”, MOCVD2005, HuangShan, China.

5. Luyu, Wang Wei, Zhu Hong-Liang, etc, “Tunable Distributed Bragg Reflector laser fabricated by Bundle Integrated Guide (BIG)Chinese Journal of Semiconductors, 24(2), pp113-117, 2003.

6. Lu Yu, Zhang Jing, Wang Wei, etc, “Wavelength Tuning in Two-Section Distributed Bragg Reflector Laser by Selective Intermixing of InGaAsP-InGaAsP Quantum Well Structure”,Chinese J.Semiconductor, Vol.24, pp903, 2003.

7. Zhang Jing, Lu Yu, Wang Wei, “quantum well intermixing of InGaAsP QWs by impurity free vacancy diffusion using SiO2 encapsulation”, Chinese J.Semiconductor, Vol.24, pp785, 2003.

8. Zhang Jing, Lu Yu, Zhao Lingjuan, etc, “An Integratable Distributed Bragg Reflector Laser by Low-Energy Ion Implantation Induced Quantum Well Intermixing” , Chinese J.Semicondctor, Vol.25, pp894, 2004.

9. Y.B. Pan, Z.J. Yang, Z.T. Chen, Y. Lu, T.J. Yu, X.D. Hu, K. Xu, G.Y. Zhang, “Reduction of threading edge dislocation density in n-type GaN by Si delta-doping”, Journal of Crystal Growth 286, pp255-258, 2006.

10. Yang zhi-jian Hu xiaodong Zhang Bei, Lu min, Lu yu, Pan yaobo, Zhang zhensheng, Ren qian, Xu jun, Li zhonghui, Chen zhizhong, Qin zhixin Yu tongjun, Tong Yuzhen, Zhang guoyi, “High quality GaN grown by epitaxial lateral overgrowth technique and epitaxial defects observation”, Chinese journal of luminescence, 26(1), pp72-76, 2005.

11.  yaobo Pan, zhijian yang, yu Lu, etc, “Improvement of properties of P-GaN By Mg Delta doping” CHIN.PHYS.LETT, vol.21 (10), pp2016, 2004.

12.Zhao lubing,yu tongjun,luyulijun,yang zhijian,zhang guoyi,“the analysis of the bowing of the thickness of GaN/sapphire layer”,TUE-GaN-B07, 74, 2007.

13  陈伟华,胡晓东,章蓓,黎子兰,潘尧波,胡成余,王崎,陆羽,陆敏,杨志坚,张国义,GaN/AlGaN超晶格透射电镜分析,半导体学报,2005,26,28。

14 孟野,陈修,唐柏林,杨波,史晓斌,陆羽,江鹏,宋广生,Cr含量对氢分离合金V90-xTi10Crx(x=0,5,10,20)组织和性能的影响,稀有金属材料与工程,No.3 Vol.52,2023。

15 唐柏林,陈修,杨波,孟野,顾亦诚,陆羽,史晓斌,张世宏,宋广生,氢分离非钯合金膜表面处理研究进展,表面技术,No.52 Vol 7,2023;

16 杨波,孟野,唐柏林,陈修,史晓斌,陆羽,高恒,任伟,宋广生, V85Ti10Y5V85Ti10Cu5合金的组织结构与氢分离性能,No9 Vol 52,2023

发明专利及实用新型专利

1、 陆羽等,“一种集成LED封装方法”公示号:CN2014202, 98734.8,2014

2、 陆羽等,“一种太阳能及其芯片和该芯片制备方法”公示号:CN2018105375793,2018

3、 陆羽等,“一种太阳能电池制备方法”公示号:CN2017114 467836 2017

4、陆羽,张靖,王圩等,"波长可调谐分布布拉格反射激光器的制作方法",授权公告号:CN1312812C。

5、陆羽,张靖,王圩等,"采用多量子阱混合技术制作波长可调谐分布布拉格反射(DBR)激光器的方法",授权公告号:CN1209859C。

6、张国义;孙永健; 贾传宇; 陆羽; 刘鹏; 付星星; 杨志坚; 童玉珍; 廉宗禺图形化GaN衬底的制备方法,授权公告号:CN102142487B

7、 李燮;  刘鹏; 陆羽; 张国义; 孙永健; 赵红军; 袁志鹏;狭缝式多气体输运喷头结构,授权公告号:CN102154691B

8、 孙永健; 张国义;陆羽;刘鹏;改进的激光准剥离消除GaN外延片残余应力的方法,授权公告号:CN102148139B

9、 李燮;陆羽; 刘鹏; 袁志鹏; 赵红军; 张俊业; 张国义; 孙永健;一种用于半导体外延系统的基座,授权公告号:CN102347258B

10、 袁志鹏;陆羽; 刘鹏; 张国义; 孙永健; 李燮; 赵红军;一种退火装置和方法,授权公告号:CN102094248B

11、 李燮;刘鹏; 陆羽; 赵红军; 袁志鹏; 孙永健; 张国义; 独立的金属源系统向半导体生长设备提供金属源气体的方法,授权公告号:CN102127808B

12、 于彤军;秦志新; 杨志坚; 胡晓东; 陈志忠; 祁山; 陆羽; 康香宁; 商淑萍; 童玉珍; 丁晓民; 张国义;分立晶粒垂直结构的LED芯片制备方法,授权公告号:CN100389503C

13、 刘鹏; 李燮; 陆羽; 孙永健; 张国义;一种多片大尺寸氢化物气相外延方法和装置,授权公告号:CN102108547B

14、 赵红军;刘鹏; 陆羽; 孙永健; 张国义;一种含氯化铵尾气的处理方法及其设备;授权公告号:CN102172458B

15、 于彤军;秦志新; 胡晓东; 陈志忠; 杨志坚; 童玉珍; 康香宁; 陆羽; 张国义;带有二维自然散射出光面的LED芯片的制备方法,授权公告号:CN100435360C

16、张国义;杨志坚;方浩;李丁;桑立雯;陶岳彬;康香宁;孙永健;陆羽;赵璐冰.一种制备自支撑单晶氮化镓衬底的方法[P]. 授权公告号:CN200810222720.7.北京大学.2010-03-31